What is Gan power supply

Gallium nitride (GaN) is a very tough and mechanically stable wide band gap semiconductor material. Due to higher breakdown strength, faster switching, higher thermal conductivity and lower on resistance, GaN based power devices are obviously superior to silicon-based devices. GaN crystals can be grown on a variety of substrates, including sapphire, silicon carbide (SIC) and silicon (SI). Growth of Gan epitaxial layers on silicon can use the existing silicon manufacturing infrastructure, thus eliminating the need for high-cost specific production facilities, and using large-diameter silicon wafers at low cost.

Gallium nitride is used to make semiconductor power devices, as well as RF components and light-emitting diodes (LEDs). Gan technology shows that it can replace silicon-based semiconductor technology in power conversion, RF and analog applications.

Gallium nitride is known as the third generation of semiconductor core materials. Compared with silicon, GaN has a wider band gap, which means that Gan can withstand higher voltage and has better conductivity than silicon. In short, Gan is much more efficient than Si at the same volume. If gallium nitride replaces all existing electronic devices, it may reduce the power consumption of electronic products by another 10% or 25%. The charger based on GaN can achieve better power and smaller volume. Early gallium nitride materials have been used in the field of communication and military industry. With the progress of technology and the demand of people, gallium nitride products have entered our lives, and the application in chargers is also gradually laid out.